Quantifying Rowhammer Vulnerability for DRAM Security
TimeTuesday, December 7th10:30am - 10:52am PST
Event Type
Research Manuscript
Virtual Programs
In-Person Only
Hardware Security: Attack and Defense
DescriptionRowhammer is a memory-based attack that leverages capacitive-coupling to induce faults in modern dynamic random-access memory (DRAM). Various solutions have been proposed to counter Rowhammer attacks but existing methods lack a circuit-level explanation of the capacitive-coupling phenomenon in modern DRAMs, the key cause of Rowhammer attacks. In this paper, we develop an analytical model of capacitive-coupling vulnerabilities in DRAMs. We validate the model with different attributions on a wide range of DRAM brands from various manufacturers. Through our model, we re-evaluate existing Rowhammer attacks with a specific focus on the recent attack. Our analysis presents a new Rowhammer attack insight.