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DTSTART:19700308T020000
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DTSTAMP:20211208T164412Z
LOCATION:Level 2 - Exhibit Hall
DTSTART;TZID=America/Los_Angeles:20211208T170000
DTEND;TZID=America/Los_Angeles:20211208T180000
UID:dac_DAC 2021_sess251_IPPOST102@linklings.com
SUMMARY:Multi-Physics Simulation Techniques toward Electromagnetic Side-Ch
 annel Attack Assessments on IC Chip Assembly
DESCRIPTION:Designer, IP and Embedded Systems Track Poster Networking Rece
 ption\n\nMulti-Physics Simulation Techniques toward Electromagnetic Side-C
 hannel Attack Assessments on IC Chip Assembly\n\nLin\n\nElectromagnetic (E
 M) emission from IC chips carries secret information of cryptographic proc
 essing because EM side channel leakage directly related with power current
  consumption during the operation of crypto ICs. Simulation-based EM side-
 channel analysis provides flexible design-time optimization opportunities.
  In this work, a multi-physics EM side-channel simulation technique is emb
 odied with dynamic power current modeling tools and EM field solvers. This
  technique makes it possible to analyze chip near-field location in three-
 dimension and specify the most critical location and sensitive parameters 
 to apply design countermeasures.\n\nVirtual Program: Presented In-Person
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